PART |
Description |
Maker |
TC59SM816BFT-70 TC59SM808BFT-75 TC59SM808BFTL-75 T |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification 16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45 |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
|
M2V64S4DTP-7 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
HY57V12820LT-P |
64M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
M2V64S40BTP-8L M2V64S30BTP-8L M2V64S40BTP-7L M2V64 |
64M bit Synchronous DRAM 6400位同步DRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
M378B6573EZ0-CG8 |
64M X 64 SYNCHRONOUS DRAM MODULE, DMA240
|
|
D4564841G5 UPD4564441 UPD4564163 UPD4564841 |
64M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
MT18LSDT6472G-133XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 MO-161, DIMM-168
|
Unisonic Technologies Co., Ltd.
|
M2V64S50ETP-I |
64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life 64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位)
|
Elpida Memory, Inc.
|